完整後設資料紀錄
DC 欄位語言
dc.contributor.authorBhardwaj, Vishalen_US
dc.contributor.authorChen, Kuan-Mingen_US
dc.contributor.authorTseng, Yuan-Chiehen_US
dc.contributor.authorChatterjee, Ratnamalaen_US
dc.date.accessioned2019-12-13T01:10:02Z-
dc.date.available2019-12-13T01:10:02Z-
dc.date.issued2019-12-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physb.2019.411662en_US
dc.identifier.urihttp://hdl.handle.net/11536/153102-
dc.description.abstractIn this work perpendicular magnetization of Co2FeAl (CFA) full-Heusler alloy films is achieved using rapid thermal annealing under N-2/H-2 gas flow in Si/beta-Ta(6.5 nm)/CFA(0.6-2 nm)/MgO(1.15 nm)/Pd(1 nm) heterostructures. The Al interdiffusion into MgO layer plays an important role in determining perpendicular magnetic anisotropy(PMA) and increasing the damping constant (alpha) of ultrathin CFA samples. The time of flight SIMS depth profiling along with XPS is used to study interdiffusion of Al across CFA/MgO interface. XPS analysis of Al-2p and Mg-1s spectra indicate the formation of A1(2)O(3) and MgAl2Ox oxide phases at CFA/MgO interface in addition to pure Al metal. The Slonczewski-like and the field-like SOT effective fields are quantified using second harmonics measurements. An effective spin hall angle of beta-Ta (6.5 nm) is estimated in range - 0.02 to - 0.06 for CFA layer thickness varied from 0.8 nm to 1.5 nm.en_US
dc.language.isoen_USen_US
dc.subjectMultilayer thin filmsen_US
dc.subjectPMAen_US
dc.subjectSOT-MRAMen_US
dc.subjectXPSen_US
dc.subjectSpin hall angleen_US
dc.subjectSecond harmonics techniqueen_US
dc.titleStudy of Al interdiffusion in ultrathin beta-Ta/Co2FeAl/MgO heterostructures for enhanced spin-orbit torqueen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.physb.2019.411662en_US
dc.identifier.journalPHYSICA B-CONDENSED MATTERen_US
dc.citation.volume574en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000488767900024en_US
dc.citation.woscount0en_US
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