Title: A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions
Authors: Huang, Hsin-Hui
Wu, Tzu-Yun
Chu, Yueh-Hua
Wu, Ming-Hung
Hsu, Chien-Hua
Lee, Heng-Yuan
Sheu, Shyh-Shyuan
Lo, Wei-Chung
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jan-2019
Abstract: A modeling framework for ferroelectric tunnel junctions (FTJs) that considers nonpolar interfacial layers (ILs), multi-domain polarization, and complete ferroelectric/capacitive/tunneling currents simultaneously is proposed. This model explains both read and write operations including the controversial switching polarities of FTJ. We also provide useful guidelines for optimizing FTJ performance where the location of IL and the effective thickness ratio between ferroelectric and interfacial layers are found to be most critical.
URI: http://hdl.handle.net/11536/155255
ISBN: 978-1-7281-4031-5
ISSN: 2380-9248
Journal: 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
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Appears in Collections:Conferences Paper