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dc.contributor.authorLin, T. -Y.en_US
dc.contributor.authorTsai, C. -H.en_US
dc.contributor.authorYau, W. -H.en_US
dc.contributor.authorChou, C. -P.en_US
dc.date.accessioned2014-12-08T15:22:44Z-
dc.date.available2014-12-08T15:22:44Z-
dc.date.issued2012-04-01en_US
dc.identifier.issn0267-0844en_US
dc.identifier.urihttp://hdl.handle.net/11536/16056-
dc.description.abstractIn this study, ultrahigh vacuum chemical vapour deposition was employed to deposit multilayered silicon-germanium (SiGe) films. Subsequently, we take those samples for ex situ thermal treatments in the furnace system (400 and 500 degrees C). The periodic multilayer SiGe with different annealing conditions measured by a commercial nanoindenter observed the slight increase in hardness. The cross-section profile and the microstructure of SiGe multilayer films were characterised by means of atomic force microscopy and transmission electron microscopy. The effect of the thermodynamics of the thin film/substrate system is evidenced by annealing treatment. It is demonstrated that the SiGe multilayer films are more susceptible to plastic deformation while annealing treatments are carried out. The misfit dislocations in the critical pile-up event were observed in the periodical SiGe multilayer that can be relaxed at thermal annealing, thus providing the nanomechanical performance.en_US
dc.language.isoen_USen_US
dc.subjectSilicon-germaniumen_US
dc.subjectUltrahigh vacuum chemical vapour depositionen_US
dc.subjectAtomic force microscopeen_US
dc.subjectHardnessen_US
dc.titleEffect of nanomechanical and microstructural properties on annealed multilayer Si0.8Ge0.2-Si filmsen_US
dc.typeArticleen_US
dc.identifier.journalSURFACE ENGINEERINGen_US
dc.citation.volume28en_US
dc.citation.issue3en_US
dc.citation.epage171en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000303599000002-
dc.citation.woscount1-
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