| Title: | Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2 |
| Authors: | Liu, CC Lee, CP Cheng, KL Cheng, HC Yew, TR 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1-Dec-1995 |
| Abstract: | SiC films were deposited on Si(100) substrates by electron cyclotron resonance chemical vapor deposition at 500 degrees C using SiH4/CH4/H-2 gas mixtures. The chemical composition and crystalline microstructure were investigated by x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy, respectively. The film composition and microstructure are correlated to process variables. The deposition mechanism which controls the film characteristics is presented. |
| URI: | http://hdl.handle.net/11536/1643 |
| ISSN: | 0013-4651 |
| Journal: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
| Volume: | 142 |
| Issue: | 12 |
| Begin Page: | 4279 |
| End Page: | 4284 |
| Appears in Collections: | Articles |
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- Effects of CH4/SiH4 flow ratio and microwave power on the growth of beta-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 degrees C / Lee, WH;Lin, JC;Lee, C;Cheng, HC;Yew, TR
- A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature / Lee, WH;Lin, JC;Lee, C;Cheng, HC;Yew, TR
- Growth mechanism and properties of the large area well-aligned carbon nano-structures deposited by microwave plasma electron cyclotron resonance chemical vapor deposition / Lin, CH;Chang, HL;Tsai, MH;Kuo, CT
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