A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs

Title:	A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs
Authors:	Chen, William P. N. Su, P. Wang, J. S. Lien, C. H. Chang, C. H. Goto, K. Diaz, C. H. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	2006
URI:	http://hdl.handle.net/11536/17322
ISBN:	1-4244-0181-X
Journal:	2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papers
Begin Page:	143
End Page:	144
Appears in Collections:	Conferences Paper