| Title: | RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs |
| Authors: | Wang, Sheng-Chun Su, Pin Chen, Kun-Ming Lin, Chien-Ting Liang, Victor Huang, Guo-Wei 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 2006 |
| URI: | http://hdl.handle.net/11536/17510 |
| ISBN: | 1-4244-0181-X |
| Journal: | 2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papers |
| Begin Page: | 139 |
| End Page: | 140 |
| Appears in Collections: | Conferences Paper |
- On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs / Wang, Sheng-Chun;Su, Pin;Chen, Kun-Ming;Lin, Chien-Ting;Liang, Victor
- 次100奈米SOI CMOS的RF/Analog特性分析與模式建立(I) / 蘇彬;Su Pin
- 次100奈米SOI CMOS的RF/Analog特性分析與模式建立(II) / 蘇彬;Su Pin
- Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs / Wang, Sheng-Chun;Su, Pin;Chen, Kun-Ming;Chen, Bo-Yuan;Huang, Guo-Wei
- Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs / Wang, Sheng-Chun;Su, Pin;Chen, Kun-Ming;Liao, Kuo-Hsiang;Chen, Bo-Yuan
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