Title: The effects of Pd2Si on the electroless plating Pd induced crystallization of amorphous silicon thin films
Authors: Huang, CTJ
Hu, GR
Wu, YCS
Chao, CW
材料科學與工程學系
Department of Materials Science and Engineering
Issue Date: 2003
Abstract: Electroless plating Pd method has been used to induce crystallization of amorphous silicon through the formation of Pd2Si. Unfortunately, after crystallization, the Pd2Si residues in the Si film degraded the polycrystalline quality. In this study, a two-step annealing process was used to reduce the Pd2Si quantity. Besides, post-RTA treatment was used to improve the quality of poly-Si.
URI: http://hdl.handle.net/11536/18665
ISBN: 1-56677-385-7
Journal: THIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGS
Volume: 2002
Issue: 23
Begin Page: 155
End Page: 158
Appears in Collections:Conferences Paper