Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C

Title:	Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C
Authors:	Cheng, KL Liu, CC Fu, CM Cheng, HC Lee, C Yew, TR 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	1996
URI:	http://hdl.handle.net/11536/19826
ISBN:	1-55899-306-1
ISSN:	0272-9172
Journal:	POLYCRYSTALLINE THIN FILMS: STRUCTURE, TEXTURE, PROPERTIES, AND APPLICATIONS II
Volume:	403
Begin Page:	271
End Page:	275
Appears in Collections:	Conferences Paper