Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide

Title:	Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
Authors:	Huang, Jheng-Jie Chang, Ting-Chang Yang, Jyun-Bao Chen, Shih-Ching Yang, Po-Chun Chen, Yu-Ting Tseng, Hsueh-Chih Sze, Simon M. Chu, Ann-Kuo Tsai, Ming-Jinn 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	Gallium oxide;nonvolatile resistance switching memory;resistance random access memory (RRAM)
Issue Date:	1-Oct-2012
Abstract:	In this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I-V sweeping. In order to increase the oxygen ion quantity in the gallium oxide layer, the proposed sample was sputtered in a mixed ambient of Ar and oxygen, and the resistance ratio was enhanced by 2.5 orders. In addition to the resistance ratio, set voltage distribution statistics show that the stability of gallium oxide sputtered in mixed Ar and oxygen gas was better than standard Ar-only sample.
URI:	http://dx.doi.org/10.1109/LED.2012.2206365 http://hdl.handle.net/11536/20306
ISSN:	0741-3106
DOI:	10.1109/LED.2012.2206365
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	33
Issue:	10
Begin Page:	1387
End Page:	1389
Appears in Collections:	Articles

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