Simulation of an Asymmetrical Nano Ring by Mapping of the Realistic Electronic Confinement Potential

Abstract

In this paper we propose a computational method which uses smooth three dimensional confinement potentials for description of the electronic properties of semiconductor nano objects. The potential is mapping the actual (known from experiment) geometrical, structural, and material composition of the objects. Using the mapping we are able to formulate an effective electronic Hamiltonian and in a very efficient manner obtain the energy states and wave functions of the electrons confined in the object. We demonstrate the approach efficiency considering influence of In distribution in an asymmetrical InAs/GaAs nano ring on the magnetic response of the object.