Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering

Title:	Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering
Authors:	Wang, Bau-Ming Yang, Tzu-Ming Wu, YewChung Sermon Su, Chun-Jung Lin, Horng-Chih 材料科學與工程學系 Department of Materials Science and Engineering
Issue Date:	2010
Abstract:	Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped alpha-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.
URI:	http://hdl.handle.net/11536/21335 http://dx.doi.org/10.1149/1.3481233
ISBN:	978-1-60768-174-8
ISSN:	1938-5862
DOI:	10.1149/1.3481233
Journal:	THIN FILM TRANSISTORS 10 (TFT 10)
Volume:	33
Issue:	5
Begin Page:	169
End Page:	172
Appears in Collections:	Conferences Paper

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