Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy

Title:	Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy
Authors:	Chien, K. F. Hsu, W. L. Tzou, A. J. . Lin, Y. C. Chou, W. C. Lee, L. Chia, C. H. Yang, C. S. 電子物理學系 Department of Electrophysics
Keywords:	Molecular beam epitaxy;Oxides;Zinc compounds;Semiconducting II-VI materials
Issue Date:	1-Sep-2013
Abstract:	` The thermal-activated carrier transfer processes in a Zn0.98Cd0.020 thin film grown by plasma-assisted molecular beam epitaxy were investigated using temperature-dependent and time-resolved photoluminescence (PL) spectroscopy. As the temperature increases from 50 to 220 K, the carriers transfer from shallow to deep localized states. Additionally, the carriers escape from the deep localized states above 220 K due to an activation energy of about 19 meV. (c) 2013 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.jcrysgro.2012.12.151 http://hdl.handle.net/11536/22473
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2012.12.151
Journal:	JOURNAL OF CRYSTAL GROWTH
Volume:	378
Issue:
Begin Page:	208
End Page:	211
Appears in Collections:	Conferences Paper

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