标题: | Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications |
作者: | Meena, Jagan Singh Chu, Min-Ching Singh, Ranjodh Wu, Chung-Shu Chand, Umesh You, Hsin-Chiang Liu, Po-Tsun Shieh, Han-Ping D. Ko, Fu-Hsiang 电子工程学系及电子研究所 光电工程学系 显示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
公开日期: | 2014 |
摘要: | We report a simple approach to fabricate an organic-inorganic hybrid gate insulator based n-type thin-film transistor (TFT) on a plastic polyimide (PI) sheet at room temperature using an appropriate composition of commercially available polymers and block copolymer surfactant. The composite material film namely; polystyrene-block-poly(methylmethacrylate) (PS-b-PMMA) is readily deposited as a gate dielectric with zinc oxide (ZnO) as a semiconductor layer. This new dielectric material film exhibits high surface energy, high air stability, very low leakage current density and better dielectric constant as compared to the conventional polymer dielectrics. This plastic ZnO-TFT combines the advantages of a high-mobility transparent inorganic semiconductor with an ultrathin high-capacitance and low-leakage PS-b-PMMA composite gate dielectric. Fourier transform infrared (FT-IR) spectrum analysis is used for the PS-b-PMMA film to confirm the presence of functional components in this composite material film. The contact angle measurements for three test liquids (e.g., distilled water, ethylene glycol and diiodomethane) reveal that the composite dielectric materials film is nearly hydrophobic and the calculated surface energy is 35.05 mJ m(-2). The resulting TFT exhibits excellent operating characteristics at V-DS=10 V with a drain-source current on/off modulation ratio (I-on/I-off) of 3.12 x 10(6) and a carrier mobility of 2.48 cm(2) V-1 s(-1). Moreover in the bending mode and in a normal environment, the device remained undistorted and shows better reliability and performance, while the thickness of PS-b-PMMA is about 28 nm. The results have suggested a new and easy approach for achieving transparent and functionally bendable optoelectronics devices. |
URI: | http://hdl.handle.net/11536/24529 http://dx.doi.org/10.1039/c4ra01517g |
ISSN: | 2046-2069 |
DOI: | 10.1039/c4ra01517g |
期刊: | RSC ADVANCES |
Volume: | 4 |
Issue: | 36 |
起始页: | 18493 |
结束页: | 18502 |
显示于类别: | Articles |
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