Interface morphology and electrical properties of bonded GaAs/GaAs wafers at different temperatures

doi:10.1149/05007.0109ecst

Title:	Interface morphology and electrical properties of bonded GaAs/GaAs wafers at different temperatures
Authors:	Chang, S. C. Wu, Y. S. Chang, N. 材料科學與工程學系 Department of Materials Science and Engineering
Issue Date:	2012
Abstract:	The microstructure and electrical properties of p-GaAs/n-GaAs bonded interface were investigated. It was observed that when bonding temperature increased from 600 to 800 degrees C, the thickness of oxide layer decreased. Current-voltage characteristic shows typical diode behaviors in these temperature ranges.
URI:	http://hdl.handle.net/11536/24564 http://dx.doi.org/10.1149/05007.0109ecst
ISBN:	978-1-60768-355-1
ISSN:	1938-5862
DOI:	10.1149/05007.0109ecst
Journal:	SEMICONDUCTOR WAFER BONDING 12: SCIENCE, TECHNOLOGY, AND APPLICATIONS
Volume:	50
Issue:	7
Begin Page:	109
End Page:	112
Appears in Collections:	Conferences Paper