Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate

doi:10.1016/j.physe.2003.12.126

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, SD	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:36:54Z	-
dc.date.available	2014-12-08T15:36:54Z	-
dc.date.issued	2005-01-01	en_US
dc.identifier.issn	1386-9477	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.physe.2003.12.126	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25299	-
dc.description.abstract	We have grown GaAs antidots in InAs matrix on (10 0) InAs substrate successfully. The quantum-sized 3-D islands were observed clearly in both AFM and TEM measurements. From these observations, the 2-D to 3-D transition thickness is determined to be between 2.25 and 2.5 ML. For 2.5 ML GaAs deposition, the grown antidots have a size of about 15-35 nm in base diameter and about 2-4 run in height with a density about 3-4 x 10(10) cm(-2). (C) 2003 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	antidots	en_US
dc.subject	self-assembled growth	en_US
dc.subject	GaAs/InAs	en_US
dc.subject	InAs substrate	en_US
dc.subject	transition thickness	en_US
dc.title	Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.physe.2003.12.126	en_US
dc.identifier.journal	PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES	en_US
dc.citation.volume	25	en_US
dc.citation.issue	4	en_US
dc.citation.spage	335	en_US
dc.citation.epage	338	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000226187900001	-
dc.citation.woscount	3	-
顯示於類別：	期刊論文

文件中的檔案：

000226187900001.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。