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dc.contributor.authorLi, ZQen_US
dc.contributor.authorLin, JJen_US
dc.date.accessioned2014-12-08T15:37:18Z-
dc.date.available2014-12-08T15:37:18Z-
dc.date.issued2004-11-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1801153en_US
dc.identifier.urihttp://hdl.handle.net/11536/25635-
dc.description.abstractWe have systematically measured the electrical resistivities and thermopowers of transparent tin-doped indium oxide films. We found that the resistivities obey the Bloch-Gruneisen law between 25 and 300 K, whereas below 25 K, the resistivities slightly increase logarithmically with the decreasing temperature due to the weak-localization and electron-electron interaction effects. The thermopowers are negative and decrease linearly with temperature from 300 K down to 1.8 K. Our results strongly indicate that the tin-doped indium oxide films behave as a good, free-electron-like conductor while being transparent. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleElectrical resistivities and thermopowers of transparent Sn-doped indium oxide filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1801153en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume96en_US
dc.citation.issue10en_US
dc.citation.spage5918en_US
dc.citation.epage5920en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000224926000088-
dc.citation.woscount48-
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