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dc.contributor.authorZhuang, W. Z.en_US
dc.contributor.authorHuang, W. C.en_US
dc.contributor.authorChiang, P. Y.en_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorHuang, K. F.en_US
dc.contributor.authorChen, Y. F.en_US
dc.date.accessioned2014-12-08T15:38:15Z-
dc.date.available2014-12-08T15:38:15Z-
dc.date.issued2010-12-20en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.18.027910en_US
dc.identifier.urihttp://hdl.handle.net/11536/26213-
dc.description.abstractWe report on a millijoule-level Yb-doped photonic crystal fiber (PCF) laser passively Q-switched with AlGaInAs quantum wells (QWs). Three types of AlGaInAs devices with different QW numbers are fabricated to investigate the performance. With 50 groups of three AlGaInAs QWs as a saturable absorber (SA), the PCF laser generates an average power of 7.1 W with a pulse repetition rate of 6.5 kHz at a pump power of 16 W, corresponding to the pulse energy of 1.1 mJ. The maximum peak power is up to 110 kW. (C) 2010 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleMillijoule-level Yb-doped photonic crystal fiber laser passively Q-switched with AlGaInAs quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.18.027910en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume18en_US
dc.citation.issue26en_US
dc.citation.spage27910en_US
dc.citation.epage27915en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000285584200046-
dc.citation.woscount3-
Appears in Collections:Articles


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