PL dependence of ZnO films grown on Si with various buffer layers by RF magnetron sputtering

doi:10.1149/1.1736594

Title:	PL dependence of ZnO films grown on Si with various buffer layers by RF magnetron sputtering
Authors:	Lin, CC Chen, SY Cheng, SY 材料科學與工程學系 Department of Materials Science and Engineering
Issue Date:	2004
Abstract:	Peculiar photoluminescence (PL) emission properties of ZnO films on Si buffered with SiO2 and Si3N4 were found. The ZnO films deposited on SiO2/Si substrate show two double peaks in the room-temperature PL spectra, one double (374 and 394 nm) in the ultraviolet region and the other double (495 and 605 nm) located in the visible region. If the ZnO film was grown on Si3N4/Si, a very strong UV along with invisible deep-level emission was detected because the Si3N4 can effectively reduce the defect formation of oxygen vacancies and Zn interstitials compared to ZnO on SiO2/Si and Si. (C) 2004 The Electrochemical Society.
URI:	http://hdl.handle.net/11536/27157 http://dx.doi.org/10.1149/1.1736594
ISSN:	1099-0062
DOI:	10.1149/1.1736594
Journal:	ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume:	7
Issue:	7
Begin Page:	J20
End Page:	J22
Appears in Collections:	Articles