Effects of thermal stabilities for the ultra thin chromium layers applied on (Ba,Sr)TiO3 thin films

doi:10.1080/10584580490459224

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DC Field	Value	Language
dc.contributor.author	Kuo, MW	en_US
dc.contributor.author	Shye, DC	en_US
dc.contributor.author	Chiou, BS	en_US
dc.contributor.author	Chen, JS	en_US
dc.contributor.author	Cheng, HC	en_US
dc.date.accessioned	2014-12-08T15:39:46Z	-
dc.date.available	2014-12-08T15:39:46Z	-
dc.date.issued	2004	en_US
dc.identifier.issn	1058-4587	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27161	-
dc.identifier.uri	http://dx.doi.org/10.1080/10584580490459224	en_US
dc.description.abstract	This work reports the temperature-electric properties for the (Ba,Sr)TiO3(BST) thin film capacitor using the multi-film structure of BST/ultra-thin-chromium(Cr) layer/BST. The BST(200 nm)/Cr(1-3 nm)/BST(200 nm) multi-films reveal excellent properties in the thermal stabilities of dielectric property, low leakage current and less power dissipation.	en_US
dc.language.iso	en_US	en_US
dc.subject	BST (77.84.-s)	en_US
dc.subject	thermal stability (68.60.Dv)	en_US
dc.subject	dielectric property (77.55.+f)	en_US
dc.title	Effects of thermal stabilities for the ultra thin chromium layers applied on (Ba,Sr)TiO3 thin films	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1080/10584580490459224	en_US
dc.identifier.journal	INTEGRATED FERROELECTRICS	en_US
dc.citation.volume	61	en_US
dc.citation.spage	183	en_US
dc.citation.epage	187	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000222470500030	-
Appears in Collections:	Conferences Paper

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