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dc.contributor.authorTsui, BYen_US
dc.contributor.authorYang, CCen_US
dc.contributor.authorFang, KLen_US
dc.date.accessioned2014-12-08T15:39:47Z-
dc.date.available2014-12-08T15:39:47Z-
dc.date.issued2004-01-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2003.820790en_US
dc.identifier.urihttp://hdl.handle.net/11536/27174-
dc.description.abstractIn this paper, thermal conductivity of porous silica film with porosity from 21 to 64 % was studied comprehensively. The corresponded dielectric constant is from 2.5 to 1.5. It is observed that the porous silica material has strong anisotropic characteristic. A serial-parallel hybrid model is proposed to explain the correlation between porosity and thermal conductivity in both in-plane and cross-plane components. The pores in the higher porosity silica film tend to distribute horizontally. This distribution of the pores in the dielectric film is the main factor that induces the anisotropic characteristic. The nonuniform distribution of pores also makes the conventional two-dimensional model of 36 method inappropriate for extracting the in-plane thermal conductivity. A new method based on the hybrid model was proposed to extract the in-plane thermal conductivity successfully. The anisotropic characteristic of the thermal conductivity may be accompanied by the anisotropic dielectric constant, which will greatly complicate the thermal management and resistance-capacitance delay simulation of the circuits and should be avoided. The proposed model would be helpful on evaluation of new porous low dielectric constant materials.en_US
dc.language.isoen_USen_US
dc.subjectdielectric constanten_US
dc.subjectporosityen_US
dc.subjectporous silicaen_US
dc.subjectthermal conductivityen_US
dc.titleAnisotropic thermal conductivity of nanoporous silica filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2003.820790en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume51en_US
dc.citation.issue1en_US
dc.citation.spage20en_US
dc.citation.epage27en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000187959600004-
dc.citation.woscount31-
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