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國立陽明交通大學機構典藏
學術出版
期刊論文
標題:
NOVEL FABRICATION TECHNIQUE TOWARDS QUANTUM DOTS
作者:
LIU, DC
LEE, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期:
20-十二月-1993
摘要:
A novel technique for semiconductor quantum dots fabrication is demonstrated. Using the technique of thermal etching or thermal evaporation during molecular beam epitaxial growth with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run.
URI:
http://dx.doi.org/10.1063/1.110133
http://hdl.handle.net/11536/2739
ISSN:
0003-6951
DOI:
10.1063/1.110133
期刊:
APPLIED PHYSICS LETTERS
Volume:
63
Issue:
25
起始頁:
3503
結束頁:
3505
顯示於類別:
期刊論文
IR@NYCU
CrossRef
半導體量子點偏振精細光譜的研究 / 鄭舜仁;Cheng Shun-Jen
半導體量子點偏振精細光譜的研究 / 鄭舜仁;Cheng Shun-Jen
Characterization of carrier dynamics in Ge quantum dots through Ge quantum-dot MOSFETs using pulsed voltage technique / Kuo, Ming-Hao;Chen, Ho-Chane;Lai, Wei-Ting;Li, Pei-Wen
利用三維電漿子超穎材料增進量子點發光效益 / 沈天琳;Shen, Tien-Lin;郭浩中;程育人;Kuo, Hao-Chung
Coordinated and Simultaneous Formation of Paired Ge Quantum Dots by Thermal Oxidation of Designer Poly-SiGe Spacer Structures / Chen, Han-Yu;Peng, Kang-Ping;George, Thomas;Lin, Horng-Chih;Li, Pei-Wen
High quality quantum dots fabricated by molecular beam epitaxy / Lee, CP;Liu, DC
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