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dc.contributor.authorChen, YYen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorLou, JCen_US
dc.date.accessioned2014-12-08T15:40:35Z-
dc.date.available2014-12-08T15:40:35Z-
dc.date.issued2003-08-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2003.815152en_US
dc.identifier.urihttp://hdl.handle.net/11536/27690-
dc.description.abstractIn this letter, the effect of surface NH3 nitridation on the electrical properties and reliability characteristics of aluminum oxide (Al2O3) interpoly capacitors is studied. With NH3 surface nitridation, the formation of an additional layer with lower dielectric constant during post-annealing process can be significantly suppressed, compared to that without nitridation treatment. Furthermore, the presence of a thin Si-N layer can make post-deposition annealing more effective in eliminating traps existing in the as-deposited films. As a result, a smoother interface and smaller electron trapping rate can contribute to the drastically reduced leakage current, enhanced breakdown field and charge to breakdown (Q(bd)) of Al2O3 interpoly capacitors with surface NH3 nitridation.en_US
dc.language.isoen_USen_US
dc.subjectAl2O3en_US
dc.subjectaluminum oxideen_US
dc.subjectinterpoly dielectricen_US
dc.subjectIPDen_US
dc.subjectsurface NH3 nitridationen_US
dc.titleHigh quality Al2O3IPD with NH3 surface nitridationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2003.815152en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume24en_US
dc.citation.issue8en_US
dc.citation.spage503en_US
dc.citation.epage505en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000184514400003-
dc.citation.woscount6-
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