Title: | Thermal stability of plasma-treated ohmic contacts to n-GaN |
Authors: | Lee, CC Lin, SD Lee, CP Yeh, MH Lee, WI Kuo, CT 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | thermal stability;ohmic contact;GaN;plasma treatment;high-temperature aging test;specific contact resistance |
Issue Date: | 1-Apr-2003 |
Abstract: | In this study, the thermal stability of plasma-treated ohmic contacts by either Cl-2/Ar or Ar plasma to n-GaN was investigated by high-temperature aging tests. With proper plasma treatment, ohmic contacts to n-GaN have a lower contact resistance than those without plasma treatment. High-temperature aging tests were performed at temperatures ranging from 400 to 600degreesC for 2h in N-2 or air ambient. No apparent electrical degradation in contact resistance was observed after aging, showing the thermal stability of plasma-treated ohmic contacts is not affected by the recovery of plasma-induced damages on the wafer surface. |
URI: | http://dx.doi.org/10.1143/JJAP.42.2313 http://hdl.handle.net/11536/28021 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.42.2313 |
Journal: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 42 |
Issue: | 4B |
Begin Page: | 2313 |
End Page: | 2315 |
Appears in Collections: | Conferences Paper |
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