Title: Thermal stability of plasma-treated ohmic contacts to n-GaN
Authors: Lee, CC
Lin, SD
Lee, CP
Yeh, MH
Lee, WI
Kuo, CT
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: thermal stability;ohmic contact;GaN;plasma treatment;high-temperature aging test;specific contact resistance
Issue Date: 1-Apr-2003
Abstract: In this study, the thermal stability of plasma-treated ohmic contacts by either Cl-2/Ar or Ar plasma to n-GaN was investigated by high-temperature aging tests. With proper plasma treatment, ohmic contacts to n-GaN have a lower contact resistance than those without plasma treatment. High-temperature aging tests were performed at temperatures ranging from 400 to 600degreesC for 2h in N-2 or air ambient. No apparent electrical degradation in contact resistance was observed after aging, showing the thermal stability of plasma-treated ohmic contacts is not affected by the recovery of plasma-induced damages on the wafer surface.
URI: http://dx.doi.org/10.1143/JJAP.42.2313
http://hdl.handle.net/11536/28021
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.2313
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 4B
Begin Page: 2313
End Page: 2315
Appears in Collections:Conferences Paper


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