Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, CH | en_US |
dc.contributor.author | Chiou, BS | en_US |
dc.contributor.author | Chang, CH | en_US |
dc.contributor.author | Lin, JD | en_US |
dc.date.accessioned | 2014-12-08T15:43:00Z | - |
dc.date.available | 2014-12-08T15:43:00Z | - |
dc.date.issued | 2002 | en_US |
dc.identifier.issn | 0957-4522 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29128 | - |
dc.identifier.uri | http://dx.doi.org/10.1023/A:1013170610826 | en_US |
dc.description.abstract | Zinc oxide phosphors (ZnO : Zn) were prepared by solid state sintering of ZnO powders with ZnS and screen printed onto ITO-coated glass substrate. The effect of ZnS content and sintering temperature on the cathodoluminescence brightness, efficiency and electrical properties of ZnO : Zn were studied. Samples with 5 wt % ZnS and sintered at 1100 degreesC exhibit the highest brightness and efficiency among all the compositions studied. The brightness of phosphors increases linearly as the accelerating voltage V and/or beam current I increases. While the efficiency decreases initially and then reaches a constant value as V and/or I increases. Both the conductivity sigma and carrier concentration n of the phosphor increase with the increase of ZnS content in the starting composition. Results of Hall measurement suggest that the ZnO : Zn phosphor is an n-type conductor with an electron mobility of around 175cm(2)/V-s. For specimen with 5 wt % ZnS, both sigma and n increases initially with the increase of sintering temperature T, and reaches a constant value at T greater than or equal to 1000 degreesC. The unreacted ZnS found in samples sintered at T < 1000 degreesC explains the temperature dependence of sigma and n. (C) 2002 Kluwer Academic Publishers. | en_US |
dc.language.iso | en_US | en_US |
dc.title | The effect of ZnS content on the luminescence and electrical properties of ZnO : Zn phosphor | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1023/A:1013170610826 | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | en_US |
dc.citation.volume | 13 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 1 | en_US |
dc.citation.epage | 5 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000172654700001 | - |
dc.citation.woscount | 19 | - |
Appears in Collections: | Articles |
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