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dc.contributor.authorLin, CHen_US
dc.contributor.authorChiou, BSen_US
dc.contributor.authorChang, CHen_US
dc.contributor.authorLin, JDen_US
dc.date.accessioned2014-12-08T15:43:00Z-
dc.date.available2014-12-08T15:43:00Z-
dc.date.issued2002en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://hdl.handle.net/11536/29128-
dc.identifier.urihttp://dx.doi.org/10.1023/A:1013170610826en_US
dc.description.abstractZinc oxide phosphors (ZnO : Zn) were prepared by solid state sintering of ZnO powders with ZnS and screen printed onto ITO-coated glass substrate. The effect of ZnS content and sintering temperature on the cathodoluminescence brightness, efficiency and electrical properties of ZnO : Zn were studied. Samples with 5 wt % ZnS and sintered at 1100 degreesC exhibit the highest brightness and efficiency among all the compositions studied. The brightness of phosphors increases linearly as the accelerating voltage V and/or beam current I increases. While the efficiency decreases initially and then reaches a constant value as V and/or I increases. Both the conductivity sigma and carrier concentration n of the phosphor increase with the increase of ZnS content in the starting composition. Results of Hall measurement suggest that the ZnO : Zn phosphor is an n-type conductor with an electron mobility of around 175cm(2)/V-s. For specimen with 5 wt % ZnS, both sigma and n increases initially with the increase of sintering temperature T, and reaches a constant value at T greater than or equal to 1000 degreesC. The unreacted ZnS found in samples sintered at T < 1000 degreesC explains the temperature dependence of sigma and n. (C) 2002 Kluwer Academic Publishers.en_US
dc.language.isoen_USen_US
dc.titleThe effect of ZnS content on the luminescence and electrical properties of ZnO : Zn phosphoren_US
dc.typeArticleen_US
dc.identifier.doi10.1023/A:1013170610826en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume13en_US
dc.citation.issue1en_US
dc.citation.spage1en_US
dc.citation.epage5en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000172654700001-
dc.citation.woscount19-
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