Hole Schottky barrier height enhancement and its application to metal-semiconductor-metal photodetectors

doi:10.1063/1.1415060

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DC 欄位	值	語言
dc.contributor.author	Lin, SD	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:43:08Z	-
dc.date.available	2014-12-08T15:43:08Z	-
dc.date.issued	2001-12-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1415060	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29197	-
dc.description.abstract	Hole Schottky barrier heights on GaAs have been studied experimentally by using a conventional metal-semiconductor-metal photodetector (MSMPD) structure. The Schottky barrier height for holes was obtained directly by the hole-current dominated dark current measurement of the MSMPD. With a thin, highly doped surface layer, control of the Schottky barrier heights for holes from 0.48 to 0.79 eV was obtained. By using these engineered Schottky contacts in the MSMPDs, over three orders of magnitude reduction in the dark currents of the MSMPDs was achieved. (C) 2001 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Hole Schottky barrier height enhancement and its application to metal-semiconductor-metal photodetectors	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1415060	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	90	en_US
dc.citation.issue	11	en_US
dc.citation.spage	5666	en_US
dc.citation.epage	5669	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000172129200033	-
dc.citation.woscount	3	-
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