Metal-organic CVD of tantalum oxide from tert-butylimidotris(diethylamido)tantalum and oxygen

Abstract

Tantalum oxide is a high dielectric material suitable for DRAM applications. CVD results using tert-butyl-imidotris(diethylamido)tantalum precursor are encouraging. AFM (see Figure), XRD, XPS, and Auger indicate that, on annealing, the deposited films crystallize to beta-Ta2O5 with uniform Ta and O distribution. Metal oxide semiconductor (MOS) capacitors fabricated from these films are also evaluated.