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dc.contributor.authorYang, WLen_US
dc.contributor.authorShieh, MSen_US
dc.contributor.authorChen, YMen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorLiu, DGen_US
dc.contributor.authorLei, TFen_US
dc.date.accessioned2014-12-08T15:45:12Z-
dc.date.available2014-12-08T15:45:12Z-
dc.date.issued2000-06-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.39.L562en_US
dc.identifier.urihttp://hdl.handle.net/11536/30461-
dc.description.abstractWe report a method to improve the polysilicon oxide integrity by using NF3-annealing. Incorporating with stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface, significant improvements are found in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced-leakage-current.en_US
dc.language.isoen_USen_US
dc.subjectpolyoxideen_US
dc.subjectNF3-annealingen_US
dc.subjectnitrogenen_US
dc.subjectfluorineen_US
dc.subjectSILCen_US
dc.titleImprovement of polysilicon oxide integrity using NF3-annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.39.L562en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume39en_US
dc.citation.issue6Ben_US
dc.citation.spageL562en_US
dc.citation.epageL563en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000088393100003-
dc.citation.woscount2-
Appears in Collections:Articles


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