Improvement of polysilicon oxide integrity using NF3-annealing

doi:10.1143/JJAP.39.L562

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, WL	en_US
dc.contributor.author	Shieh, MS	en_US
dc.contributor.author	Chen, YM	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Liu, DG	en_US
dc.contributor.author	Lei, TF	en_US
dc.date.accessioned	2014-12-08T15:45:12Z	-
dc.date.available	2014-12-08T15:45:12Z	-
dc.date.issued	2000-06-15	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.39.L562	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30461	-
dc.description.abstract	We report a method to improve the polysilicon oxide integrity by using NF3-annealing. Incorporating with stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface, significant improvements are found in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced-leakage-current.	en_US
dc.language.iso	en_US	en_US
dc.subject	polyoxide	en_US
dc.subject	NF3-annealing	en_US
dc.subject	nitrogen	en_US
dc.subject	fluorine	en_US
dc.subject	SILC	en_US
dc.title	Improvement of polysilicon oxide integrity using NF3-annealing	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.39.L562	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	39	en_US
dc.citation.issue	6B	en_US
dc.citation.spage	L562	en_US
dc.citation.epage	L563	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000088393100003	-
dc.citation.woscount	2	-
顯示於類別：	期刊論文

文件中的檔案：

000088393100003.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。