ELECTRICAL BEHAVIOR OF THE MNO2-DOPED ZNO-BI2O3 SYSTEM

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DC Field	Value	Language
dc.contributor.author	CHIOU, BS	en_US
dc.contributor.author	CHUNG, MC	en_US
dc.date.accessioned	2014-12-08T15:04:37Z	-
dc.date.available	2014-12-08T15:04:37Z	-
dc.date.issued	1993-03-01	en_US
dc.identifier.issn	0957-4522	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3106	-
dc.description.abstract	The electrical behaviour of xwt% MnO2-(100-x)(95 wt% ZnO-5 wt% Bi2O3) is investigated. Addition of MnO2 retards grain growth in the ZnO-Bi2O3 system. It is observed that the MnO2 dopant decreases the leakage current, while it increases the non-linearity coefficient and the grain boundary resistance of ZnO-Bi2O3 ceramics. In addition, the noise spectrum of MnO2-doped ZnO-Bi2O3 deviates from 1/f behaviour. The deviation is, however, less enhanced for samples with more MnO2 dopant.	en_US
dc.language.iso	en_US	en_US
dc.title	ELECTRICAL BEHAVIOR OF THE MNO2-DOPED ZNO-BI2O3 SYSTEM	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS	en_US
dc.citation.volume	4	en_US
dc.citation.issue	1	en_US
dc.citation.spage	38	en_US
dc.citation.epage	42	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993KU66400003	-
dc.citation.woscount	1	-
Appears in Collections:	Articles