Title: Copper chemical vapor deposition films deposited from Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) vinyltrimethylsilane
Authors: Lin, PJ
Chen, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Cu(hfac)VTMS;copper;LPCVD;resistivity;microstructure
Issue Date: 1-Aug-1999
Abstract: Copper chemical vapor deposition (Cu CVD) from Cu(hfac)vinyltrimethylsilane was studied using a low pressure chemical vapor deposition (LPCVD) system of a cold-wall vertical reactor. It was found that the resistivity of the chemical vapor deposited Cu films,was dependent on the film's microstructure and impurity content, which in turn. were dependent on the deposition conditions. Using H-2 as the carrier gas, we were able to deposit Cu films of low impurity content at deposition rates as high as 150 Angstrom/min. The lowest resistivity Cu films can be deposited at a temperature of 180 degrees C and a pressure of 300 mTorr.
URI: http://hdl.handle.net/11536/31167
ISSN: 0021-4922
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 8
Begin Page: 4863
End Page: 4867
Appears in Collections:Articles


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