| Title: | Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete Dopants |
| Authors: | Li, Yiming Hwang, Chih-Hong Yeh, Ta-Ching 電信工程研究所 Institute of Communications Engineering |
| Issue Date: | 2008 |
| URI: | http://hdl.handle.net/11536/32220 |
| ISBN: | 978-1-4244-2071-1 |
| Journal: | 2008 IEEE SILICON NANOELECTRONICS WORKSHOP |
| Begin Page: | 99 |
| End Page: | 100 |
| Appears in Collections: | Conferences Paper |
- Characteristics Variability of Novel Lateral Asymmetry Nano-MOSFETs due to Random Discrete Dopant / Lee, Kou-Fu;Hwang, Chih-Hong;Li, Tien-Yeh;Li, Yiming
- Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants / Lee, Kuo-Fu;Li, Yiming;Hwang, Chih-Hong
- Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants / Lee, Kuo-Fu;Li, Yiming;Hwang, Chih-Hong
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