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dc.contributor.authorLai, WKen_US
dc.contributor.authorLiu, HWen_US
dc.contributor.authorJuang, MHen_US
dc.contributor.authorChen, NCen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:48:55Z-
dc.date.available2014-12-08T15:48:55Z-
dc.date.issued1998-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.701436en_US
dc.identifier.urihttp://hdl.handle.net/11536/32534-
dc.description.abstractA novel process that implants BF2+ ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided pf poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide.en_US
dc.language.isoen_USen_US
dc.titleA novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent annealen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.701436en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume19en_US
dc.citation.issue7en_US
dc.citation.spage259en_US
dc.citation.epage261en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000074366900016-
dc.citation.woscount3-
Appears in Collections:Articles


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