| 标题: | CHARACTERISTICS OF TITANIUM SILICIDE FORMED BY SI/MO/TI TRILAYER METALLIZATION |
| 作者: | CHIOU, BS YANG, BJ CHANG, PH 交大名义发表 电子物理学系 National Chiao Tung University Department of Electrophysics |
| 公开日期: | 1-三月-1989 |
| URI: | http://dx.doi.org/10.1088/0268-1242/4/3/007 http://hdl.handle.net/11536/4400 |
| ISSN: | 0268-1242 |
| DOI: | 10.1088/0268-1242/4/3/007 |
| 期刊: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
| Volume: | 4 |
| Issue: | 3 |
| 起始页: | 177 |
| 结束页: | 183 |
| 显示于类别： | Articles |
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- AN ENVIRONMENT-INSENSITIVE TRILAYER STRUCTURE FOR TITANIUM SILICIDE FORMATION / LIN, MZ;YU, YCS;WU, CY
- DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE / CHEN, CC;YU, JL;LEE, CY;LIU, CS;CHIU, HT
- Improvement of junction leakage of nickel silicided junction by a Ti-capping layer / Hou, TH;Lei, TF;Chao, TS
- COBALT SILICIDE INTERCONNECTION FROM A SI/W/CO TRILAYER STRUCTURE / LIN, MZ;WU, CY
- 矽化钛奈米结构之成长及其鉴定 / 林煌凯;Lin, Huang-Kai;裘性天;Chiu, Hsin-Tien
- METALLIZATION OF W/CO-TI/SI AND SIMULTANEOUS FORMATION OF DIFFUSION BARRIER AND SHALLOW COSI2 CONTACT IN NORMAL FLOWING-NITROGEN FURNACE / YANG, FM;PENG, JG;HUANG, TS;HUANG, SL;CHEN, MC
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