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dc.contributor.authorCHANG, KMen_US
dc.date.accessioned2014-12-08T15:05:56Z-
dc.date.available2014-12-08T15:05:56Z-
dc.date.issued1988-11-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/4476-
dc.language.isoen_USen_US
dc.titleACTIVITY-COEFFICIENTS OF ELECTRONS AND HOLES IN SEMICONDUCTORS WITH NONUNIFORM COMPOSITION .1. NONDEGENERATEen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume135en_US
dc.citation.issue11en_US
dc.citation.spage2859en_US
dc.citation.epage2862en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1988Q824100042-
dc.citation.woscount0-
Appears in Collections:Articles


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