半導體廠深紫外光(248奈米波長)雷射曝光機, A/B鏡頭及雷射共振腔壽命延長藉由高效率的功率曲線控制之研究

Abstract

伴隨著積體的不斷進步到奈米等級,以雷射當曝光源取代傳統燈炮當曝光源己經是愈來愈盛行, 但是雷射當曝光源雖然可以把積體電路的線寬製作到奈米等級, 但是伴隨而來的花費及機台的維護亦變得愈來愈複雜而且維修保養的頻率也增加人力的效率. 本論文研製之主要目的為我們發現 ASML公司製作的深紫外線DUV248掃描器曝光機遭受嚴重的鏡頭 A / B 破壞事件。它造成的晶圓級曝光量強度趨於嚴重下降。因為我們知道，晶圓級曝光量強度嚴重影響到生產的輸出量。之前，我們可以調整可變動衰減器的角度來改善晶圓級曝光量強度的下降或更換鏡頭 A / B來解決它。但鏡頭 A / B的破壞情況卻是一再的發生。它花了很多時間，人力成本來恢復。因此，如何減少鏡頭更換或工程師的負荷來增加效率是必要的。根據經驗，我們發現，它的鏡頭 A / B 主要是受到了雷射激光的破壞。在最後的分析，根本原因是高能量激光誘導鏡頭的A / B的污染。我們創建了原始的強度控制方法，以延長鏡頭的A / B壽命; 此外，它又可以延長電射激光腔的壽命。自實施這種方案以來，這種情況已經大大的改善並被以被控制。

Along with the continuous advancement of integrated to the nanometer level, use the laser source for exposure is more and more popular to instead of the traditional bulb. We can get the benefit of the integrated line width improve to nanometer level, but the cost and maintenance of the laser machine becomes increasing complex. The frequency of repair and maintenance to increase, it also decreases the efficiency of the manpower. The paper is study the ASML DUV 248 scanner suffered lens A/B seriously destroy event. And this event was getting worse and worse. It caused the wafer level intensity trended down seriously. As we known, the wafer level intensity affects the throughput of production. Before, we could adjust VA angle or replace lens A/B to solve it. But lens A/B contamination happened and happened again. It spent a lot of time, manpower and cost in recovery. So how to reduce lens replaced rate or engineer’s loading was necessary. According to experience, we found it cause from the lens A/B was damaged by laser. In the last analysis, the root cause was higher energy laser induce lens A/B contamination. We created original intensity control method to extend lens A/B lens lifetime; moreover, it could extend Laser chamber lifetime, either. This situation has been changed and proved it is workable after the program was implementing.