| Title: | 新結構複晶矽薄膜電晶體的設計與低溫製作 Fabrication of low-temperature processed poly-Si TFT with field-plate double offset-gate structure |
| Authors: | 陳奇祥 葉清發 電子研究所 |
| Issue Date: | 1984 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT732428013 http://hdl.handle.net/11536/52032 |
| Appears in Collections: | Thesis |
- 新結構複晶矽薄膜電晶體的設計與低溫製作 / 陳奇祥;Chyi-Hsiang Chern;葉清發;Ching-Fa Yeh
- 低漏電流複晶矽薄膜電晶體的低溫製作 / 葉清發
- Characterization of the novel polysilicon TFT with a subgate coupling structure / Chang, KM;Chung, YH;Deng, CG;Chung, YF;Lin, JH
- Novel low-temperature polysilicon thin-film transistors with a self-aligned gate and raised source/drain formed by the damascene process / Chang, Kow Ming;Lin, Gin Min;Yang, Guo Liang
- Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels / Wu, YC;Chang, TC;Liu, PT;Chou, CW;Wu, YC
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