A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

Title:	A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics
Authors:	Su, Nai-Chao Wang, Shui Jinn Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	Charge-trapping-engineered Flash (CTEF);high-kappa;InGaZnO;metal-oxide-nitride-oxide-semiconductor (MONOS);nonvolatile memory (NVM)
Issue Date:	1-Mar-2010
Abstract:	We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-mu s speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-kappa layers.
URI:	http://dx.doi.org/10.1109/LED.2009.2037986 http://hdl.handle.net/11536/5776
ISSN:	0741-3106
DOI:	10.1109/LED.2009.2037986
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	31
Issue:	3
Begin Page:	201
End Page:	203
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.