標題: 3-5um及8-12um量子井紅外線偵測器
3-5um and 8-12um Quantum Well Infrared Photodetectors
作者: 陳珀璋
Po-Chang Chen
李建平
Chien-Ping Lee
電子研究所
關鍵字: 量子井紅外線偵測器;紅外線偵測器;QWIP; Infrared Photodetector
公開日期: 1994
摘要: 在本篇論文中,我們研究3-5um和8-12um量子井紅外線偵測器(QWIPs),內
容包括基本理論,製程技術,雙位障QWIPs以及一維暨二維光柵的耦合效
應。在3-5um紅外線波段,我們製作了兩種雙位障量子井紅外線偵測器(
DBQWIPs),其一是定量研究內部位障厚度對DBQWIP性能的影響,結果顯示
當內部位障的厚度為12A時具有最佳之性能表現;其二是探討應變層砷化
銦鎵/砷化鋁鎵量子井結構,結果顯示其暗電流並未明顯增加。此外,在
一二維光柵的耦合效應研究中,我們採用吸收8um的QWIP作為試片,除了
由實驗結果得到二維光柵的反應度約為一維光柵的兩倍外,並找出最佳之
光柵蝕刻方向是與砷化鎵V型槽相平行,再由吸收波峰對光柵週期之變化
得到在此波段的折射率約等於3。最後,由偏極化分析驗證了光柵耦合的
效應,我們得到若入射光的電場平行於多重量子井,則其並不會被吸收,
這與量子力學中的選擇規則相符。
In this thesis, we have studied 3-5um and 8-12um quantum well
infrared photodetectors(QWIPs), including the basic theory, the
experimental techniques, the double barrier QWIPs, and effect
of coupling using one and two dimensional gratings. In the
3-5um infrared regime, we demonstrated two types of double
quantum well infrared photodetectors (DBQWIPs). For the first
type DBQWIPs, the effects of the inner barrier thickness on the
performance of DBQWIPs were quantitatively studied. From the
experimental results, the performance of QWIPs with 12A inner
barrier is the best. For the second type DBQWIPs, we studied
the straind InGaAs/AlGaAs quantum well structure. The dark
currnt did not increse notably. In addition, we studied the
effect of coupling with one and two dimensional gratings using
8um QWIPs. The responsivities with two dimensional gratings are
nearly twice of those with one dimensional gratings. We found
that the best etching direction of gratings is that parallel to
GaAs V- groove direction. From the results of the absorption
peaks and grating periods, the GaAs index of refraction is very
close to 3 in long wavelength (8um) regime. Finally, the effect
of grating coupling was verified by polarization analysis.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT830430084
http://hdl.handle.net/11536/59275
顯示於類別:畢業論文