| 標題: | 鍺非晶化與低能量氟化硼離子佈植之研究 The investigation of Ge preamorphization and low energy BF2+ implanted Si |
| 作者: | 紀忠良 Ji, Zhong Liang 謝宗雍 Xie, Zong Yong 材料科學與工程學系 |
| 公開日期: | 1994 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT832159006 http://hdl.handle.net/11536/59670 |
| 顯示於類別： | 畢業論文 |
- Controlling the diffusion of implanted boron in Si and silicide by multiple implants / Chu, CH;Ho, KJ;Huang, CT;Shvu, SH;Lei, TF
- 鍺離子佈植技術應用於淺接面製作產生的晶體缺陷之退火行為及其消除方法和低壓化學沉積矽薄膜磊晶之研究 / 陳邦旭;Peng-Shiu Chen;謝宗雍;T. E. Hiseh
- Defects in Ge+-preamorphized silicon / Chen, PS;Hsieh, TE;Hwang, YC;Chu, CH
- Removal of end-of-range defects in Ge+-pre-amorphized Si by carbon ion implantation / Chen, PS;Hsieh, TE;Chu, CH
- The Strained-SiGe Relaxation Induced Underlying Si Defects Following the Millisecond Annealing for the 32 nm PMOSFETs / Yu, M. H.;Wang, L. T.;Huang, T. C.;Lee, T. L.;Cheng, H. C.
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