矽晶圓製程之積體天線設計

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DC Field	Value	Language
dc.contributor.author	張駿逸	en_US
dc.contributor.author	Chun Yi Chang	en_US
dc.contributor.author	林育德	en_US
dc.contributor.author	Yu De Lin	en_US
dc.date.accessioned	2014-12-12T02:28:34Z	-
dc.date.available	2014-12-12T02:28:34Z	-
dc.date.issued	2001	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT900435108	en_US
dc.identifier.uri	http://hdl.handle.net/11536/68987	-
dc.description.abstract	本篇論文使用使用質子佈植矽晶基板設計單極及倒F型天線，此方法可提高矽晶圓的電阻率到達10MΩ-cm，由實作量測結果可看出在頻率40GHz附近均可獲致良好的天線效果。本文另一部份使用金屬隔離矽晶圓基板設計槽型及貼片型天線，模擬結果顯示這兩種天線都可在此基板上獲得好的阻抗匹配及天線效率。	zh_TW
dc.description.abstract	We design monopole and inverted-F antennas on proton-implanted silicon with 1MΩ-cm resistivity. From measured data, we can observe the good antenna quality around 40GHz. On the other part of this paper, we design the slot and patch antennas that are shielding by conductor from silicon substrate. Simulation results indicate that the two antennas have good matching impedances and antenna efficiency.	en_US
dc.language.iso	zh_TW	en_US
dc.subject	矽	zh_TW
dc.subject	積體天線	zh_TW
dc.subject	silicon	en_US
dc.subject	integrated antennas	en_US
dc.title	矽晶圓製程之積體天線設計	zh_TW
dc.title	Design of integrated antennas in silicon process	en_US
dc.type	Thesis	en_US
dc.contributor.department	電信工程研究所	zh_TW
Appears in Collections:	Thesis