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dc.contributor.authorHuang, Wei-Shengen_US
dc.contributor.authorLin, Chia-Weien_US
dc.contributor.authorLin, Jiann T.en_US
dc.contributor.authorHuang, Jen-Hsienen_US
dc.contributor.authorChu, Chih-Weien_US
dc.contributor.authorWu, Ying-Hsienen_US
dc.contributor.authorLin, Hong-Cheuen_US
dc.date.accessioned2014-12-08T15:09:15Z-
dc.date.available2014-12-08T15:09:15Z-
dc.date.issued2009-07-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2009.02.022en_US
dc.identifier.urihttp://hdl.handle.net/11536/7065-
dc.description.abstractA series benzoimidazole-based dendritric complexes of iridium dendrimers containing Frechet-type dendrons with peripheral fluorenyl surface groups have been synthesized. These iridium dendrimers are green-emitting with high phosphorescence quantum yield, and can be spin-coated as films of good quality. From cyclic voltammograms (CV), high onset potentials at 1.42-1.58 V due to the peripheral fluorene group were observed. Device from a second generation dendrimer 17 with structure of ITO/PEDOT:PSS/CBP: 20 wt% 17/TPBI/LiF/Al (PEDOT:PSS = poly(ethylene dioxythiophene): polystyrenesulfonate and CBP = bis(N-carbazolyl)biphenyl) has the best performance: maximum external quantum efficiency of 13.58% and maximum current efficiency of 45.7 cd/A. Space-charge-limited current (SCLC) flow technique was used to measure the mobility of charge carriers in the blend films of the compounds in CBP. Blend films of higher generation dendrimers have lower hole mobility, albeit with higher device efficiencies. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectIridium complexesen_US
dc.subjectDendrimersen_US
dc.subjectPhosphorescenceen_US
dc.subjectOrganic light-emitting diodesen_US
dc.titleHighly branched green phosphorescent tris-cyclometalated iridium(III) complexes for solution-processed organic light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2009.02.022en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume10en_US
dc.citation.issue4en_US
dc.citation.spage594en_US
dc.citation.epage606en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000267335800007-
dc.citation.woscount18-
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