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dc.contributor.authorLin, Yow-Jonen_US
dc.contributor.authorTsai, Chia-Lungen_US
dc.contributor.authorLiu, W. -R.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorTsao, Hou-Yenen_US
dc.contributor.authorChu, Jian-Anen_US
dc.contributor.authorChang, Hsing-Chengen_US
dc.date.accessioned2014-12-08T15:09:17Z-
dc.date.available2014-12-08T15:09:17Z-
dc.date.issued2009-07-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3157201en_US
dc.identifier.urihttp://hdl.handle.net/11536/7089-
dc.description.abstractWe report on the effect of ultraviolet (UV) treatment on the specific contact resistance (rho) and electronic transport at the Ti/ZnO interfaces. The experimental results show the same barrier height of Ti/ZnO samples without UV treatment as Ti/ZnO samples with UV treatment and the higher rho of Ti/ZnO samples with UV treatment than Ti/ZnO samples without UV treatment, suggesting the barrier-height independence of rho. Based on the thermionic-emission model and x-ray photoelectron spectroscopy results, we found that the induced decrease in the number of the hydroxides at the surface region of ZnO by UV treatment resulted in decreases in the electron concentration near the surface region and the excess current component related to tunneling, increasing in rho of Ti/ZnO samples.en_US
dc.language.isoen_USen_US
dc.subjectcontact resistanceen_US
dc.subjectelectrical resistivityen_US
dc.subjectelectron densityen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectsemiconductor-metal boundariesen_US
dc.subjectthermionic emissionen_US
dc.subjecttitaniumen_US
dc.subjectwide band gap semiconductorsen_US
dc.subjectX-ray photoelectron spectraen_US
dc.subjectzinc compoundsen_US
dc.titleEffects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfacesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3157201en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume106en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000268065000056-
dc.citation.woscount4-
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