标题: | Up-Conversion 萤光量测系统的架设和极小尺寸氮化铟奈米棒阵列的变温萤光量测 The Construction of Up-Conversion Luminescence System and Temperature-dependent PL Study of InN Nanorod Arrays with Critical Size |
作者: | 刘育升 Liu, Yu-Sheng 安惠荣 Ahn, Hyeyoung 光电工程研究所 |
关键字: | 氮化铟;萤光;合频;时间解析光谱;InN;Upconversion;Photoluminescence;Sum-frequcency;Time-resolved PL |
公开日期: | 2012 |
摘要: | Photoluminescence (PL) can characterize the emission property of various semiconductors, which is in turn used to understand the purity, crystalline quality, disorders, etc. of semiconductors such as InGaAs and InP. In this work, we have intensively studied the PL from vertically aligned indium nitride (InN) nanorods (NRs) grown on Si (111) substrates. In particular, the abnormal behavior of PL from InN NRs with the rod diameter comparable to the surface electron accumulation layer was observed. Exceptionally large activation energy of the NRs with the critical diameter implies that holes within these narrow NRs need to surpass the band bending near the surface in order to recombine with electrons accumulated in the surface layer. Time-resolved PL (TRPL) also plays an important role in providing the information of dynamic behavior of radiative recombination of semiconductors. However, time-correlated single photon counting method, which is typically used for life science, has rather long time resolution for elucidating the dynamic phenomena of semiconductors. In the second part of this thesis, the development of up-conversion PL system is introduced. The basic concept of sum frequency generation and its application to the ultrafast luminescence spectroscopy are described in detail. Furthermore, the optical configuration, photon counting technique, and the automatic control of the up-conversion PL system are demonstrated. The theoretical calculation of TRPL signal level are compared to the preliminary experimental results of our system. Photoluminescence (PL) can characterize the emission property of various semiconductors, which is in turn used to understand the purity, crystalline quality, disorders, etc. of semiconductors such as InGaAs and InP. In this work, we have intensively studied the PL from vertically aligned indium nitride (InN) nanorods (NRs) grown on Si (111) substrates. In particular, the abnormal behavior of PL from InN NRs with the rod diameter comparable to the surface electron accumulation layer was observed. Exceptionally large activation energy of the NRs with the critical diameter implies that holes within these narrow NRs need to surpass the band bending near the surface in order to recombine with electrons accumulated in the surface layer. Time-resolved PL (TRPL) also plays an important role in providing the information of dynamic behavior of radiative recombination of semiconductors. However, time-correlated single photon counting method, which is typically used for life science, has rather long time resolution for elucidating the dynamic phenomena of semiconductors. In the second part of this thesis, the development of up-conversion PL system is introduced. The basic concept of sum frequency generation and its application to the ultrafast luminescence spectroscopy are described in detail. Furthermore, the optical configuration, photon counting technique, and the automatic control of the up-conversion PL system are demonstrated. The theoretical calculation of TRPL signal level are compared to the preliminary experimental results of our system. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT079924543 http://hdl.handle.net/11536/72541 |
显示于类别: | Thesis |
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