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dc.contributor.authorHu, Chih-Weien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorShueh, Pei-Kunen_US
dc.contributor.authorLin, Chao-Chengen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorChen, Min-Chenen_US
dc.date.accessioned2014-12-08T15:09:47Z-
dc.date.available2014-12-08T15:09:47Z-
dc.date.issued2009-03-09en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3097810en_US
dc.identifier.urihttp://hdl.handle.net/11536/7495-
dc.description.abstractCo nanodot memory devices formed by oxidation processes were studied. Transmission electron microscopy and x-ray photoelectron spectroscopy analyses showed that overoxidation of the cobalt and silicon degraded the charge-storage ability seriously. However, a precapped oxide can mildly oxidize the CoSi(2) film to protect the overoxidation to occur. In addition, an oxygen-incorporated CoSi(2) film is proposed to improve the oxidation process further. Through incorporating the limited oxygen during sputtering process, the Co nanodot memory device obtains a larger memory window. Also, the reliability characteristic of the Co nanodot memory device formed by annealing the oxygen-incorporated CoSi(2) film has been demonstrated.en_US
dc.language.isoen_USen_US
dc.subjectannealingen_US
dc.subjectcobalt compoundsen_US
dc.subjectnanofabricationen_US
dc.subjectoxidationen_US
dc.subjectprotective coatingsen_US
dc.subjectrandom-access storageen_US
dc.subjectsputteringen_US
dc.subjecttransmission electron microscopyen_US
dc.subjectX-ray photoelectron spectraen_US
dc.titleCobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3097810en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.citation.issue10en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000264280000042-
dc.citation.woscount6-
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