銅苯二甲藍修飾源/汲電極之高效率有機薄膜電晶體

Abstract

二氧化矽介電層，經由自組裝單層表面處理後，從原來的親水性，轉換成適合有機材料成長的疏水性。而經由PαMS表面處理後，得到最高0.5 cm2/Vs 的載子遷移率，以及大於106的整流比。 銅苯二甲藍已經被使用於接面緩衝層以增進高有機薄膜電晶體的元件效能。當置入10奈米的銅苯二甲藍於金屬/有機半導體接面，從線性回歸法可得知接面電阻降低了70%。元件遷移率也增加了80%。從較高的電洞二極體之電流也可印證置入銅苯二甲藍可改善電洞的注入，我們推測此接面的改善是由於金與銅苯二甲藍能帶間隙中的狀態所致。

The insulator surface treatment transforms the hydrophilic SiO2 surface to hydrophobic one that is more suitable for organic materials deposition. Organic thin-film transistors (OTFTs) modified by poly(□-methylstyrene) (P□MS) exhibit a high mobility (0.5 cm2/Vs ) with a high on/off ratio ( > 106 ). Copper phthalocyanine (CuPC) has been used as the contact buffer layer to improve the device performance of organic thin-film transistors (OTFTs). By incorporating with 10 nm CuPC, the contact resistance was decreased to 70%, deduced from line-transfer method. The mobility was also improved by 86%. The higher hole current observed in the hole-only diode incorporating with CuPC further confirm the improvement of hole-injection efficiency. Finally, it is inferred that the lower injection barrier is resulted from the induced gap states at the Au/CuPC interfaces.