Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots

doi:10.1063/1.2975169

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DC 欄位	值	語言
dc.contributor.author	Lin, S. D.	en_US
dc.contributor.author	Ilchenko, V. V.	en_US
dc.contributor.author	Marin, V. V.	en_US
dc.contributor.author	Panarin, K. Y.	en_US
dc.contributor.author	Buyanin, A. A.	en_US
dc.contributor.author	Tretyak, O. V.	en_US
dc.date.accessioned	2014-12-08T15:10:56Z	-
dc.date.available	2014-12-08T15:10:56Z	-
dc.date.issued	2008-09-08	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2975169	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8363	-
dc.description.abstract	The frequency dependence of negative differential capacitance (NDC) in Schottky diodes with InAs quantum dots (QDs) is studied. The measured peak capacitances of NDC decay rapidly as the testing frequencies are higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included. (c) 2008 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2975169	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	93	en_US
dc.citation.issue	10	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000259797000077	-
dc.citation.woscount	6	-
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