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dc.contributor.authorHuang, Ting-Kaien_US
dc.contributor.authorChen, Ying-Chiehen_US
dc.contributor.authorKo, Hsin-Chunen_US
dc.contributor.authorHuang, Hsin-Weien_US
dc.contributor.authorWang, Chia-Hsinen_US
dc.contributor.authorLin, Huang-Kaien_US
dc.contributor.authorChen, Fu-Rongen_US
dc.contributor.authorKai, Ji-Jungen_US
dc.contributor.authorLee, Chi-Youngen_US
dc.contributor.authorChiu, Hsin-Tienen_US
dc.date.accessioned2014-12-08T15:11:22Z-
dc.date.available2014-12-08T15:11:22Z-
dc.date.issued2008-06-03en_US
dc.identifier.issn0743-7463en_US
dc.identifier.urihttp://dx.doi.org/10.1021/la8000575en_US
dc.identifier.urihttp://hdl.handle.net/11536/8731-
dc.description.abstractA simple galvanic reduction for direct growth of An nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4(aq) with Sn-(s) in the presence of CTAC((aq)) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 mu m.en_US
dc.language.isoen_USen_US
dc.titleGrowth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/la8000575en_US
dc.identifier.journalLANGMUIRen_US
dc.citation.volume24en_US
dc.citation.issue11en_US
dc.citation.spage5647en_US
dc.citation.epage5649en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000256232900003-
dc.citation.woscount22-
Appears in Collections:Articles


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