| Title: | 砷化鎵晶片高溫接合中介面空孔之研究 High-Temperature Healing of Interfacial Voids in GaAs Wafer Bonding |
| Authors: | 吳耀銓 YEWCHUNG SERMONWU 國立交通大學材料科學與工程學系 |
| Issue Date: | 2000 |
| Gov't Doc #: | NSC89-2215-E009-075 |
| URI: | http://hdl.handle.net/11536/89575 https://www.grb.gov.tw/search/planDetail?id=574873&docId=107450 |
| Appears in Collections: | Research Plans |
- High-temperature healing of interfacial voids in GaAs wafer bonding / Wu, YCS;Liu, PC;Feigelson, RS;Route, RK
- Healing kinetics of interfacial voids in GaAs wafer bonding / Wu, YCS;Hu, GZ
- Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers / Hao, OY;Wu, YCS;Chiou, HH;Liu, CC;Cheng, JH
- Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers / Liu, PC;Lu, CL;Wu, YCS;Cheng, JH;Ouyang, H
- Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers / Liu, PC;Hou, CY;Wu, YCS
- Wafer-level Cu-Cu bonding technology / Tang, Ya-Sheng;Chang, Yao-Jen;Chen, Kuan-Neng
- Interface Morphology Investigation of Bonded p-GaAs/p-Si Wafers / Hsieh, Cheng-Yu;YewChung;Wu, Sermon
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