用晶圓接合來剝離懸空側向成長的氮化鎵磊晶層

Title:	用晶圓接合來剝離懸空側向成長的氮化鎵磊晶層 Lift off GaN Pseudo Epitaxy Layer by Wafer Bonding
Authors:	吳耀銓 YEWCHUNG SERMONWU 交通大學材料科學與工程系
Issue Date:	2002
Gov't Doc #:	NSC91-2622-E009-034-CC3
URI:	http://hdl.handle.net/11536/92987 https://www.grb.gov.tw/search/planDetail?id=792303&docId=152187
Appears in Collections:	Research Plans