一種新式氮化矽快閃式記憶元件研究(I)

Title:	一種新式氮化矽快閃式記憶元件研究(I) Physics, Characterization and Design of Oxide-Nitride-Oxide Flash EEPROM Devices (I)
Authors:	汪大暉 WANG TAHUI 國立交通大學電子工程學系
Keywords:	氮化矽;快閃記憶體;物理特性;電子可抹拭唯讀記憶體;Silicon nitride;Flash memory;Physical characterization;EEPROM
Issue Date:	2001
Gov't Doc #:	NSC90-2215-E009-066
URI:	http://hdl.handle.net/11536/93431 https://www.grb.gov.tw/search/planDetail?id=665696&docId=126372
Appears in Collections:	Research Plans